Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts

Chien Jyun Chiou; Shao Pin Chiu; Juhn-Jong Lin; Yi-Chia Chou

doi:10.1039/c5ce00655d

Effects of atomic scale imperfection at the interfaces of CoSi₂ and Si (100) on Schottky barrier contacts

Chien Jyun Chiou, Shao Pin Chiu, Juhn-Jong Lin, Yi-Chia Chou^*

^*此作品的通信作者

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moiré fringes at the interfaces of CoSi₂ and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts.

原文	English
頁（從 - 到）	4276-4280
頁數	5
期刊	CrystEngComm
卷	17
發行號	23
DOIs	https://doi.org/10.1039/c5ce00655d
出版狀態	Published - 21 6月 2015

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10.1039/c5ce00655d

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abstract = "We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moir{\'e} fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts.",

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AU - Chiu, Shao Pin

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AU - Chou, Yi-Chia

PY - 2015/6/21

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AB - We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moiré fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts.

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Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts

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Effects of atomic scale imperfection at the interfaces of CoSi₂ and Si (100) on Schottky barrier contacts