Effects of Annealing Temperature on TiN/Hf_0.5Zr_0.5O₂/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

In this letter, the ferroelectric characteristics and reliability of TiN/Hf0.5Zr0.5O2/TiN Metal-Ferroelectric-Metal (MFM) capacitor fabricated using the ''in-situ'' like consecutive atomic layer deposition (C-ALD) and the 'ex-situ' deposition techniques are compared for different post metal annealing (PMA) temperatures. We suggested that C-ALD deposition improves the interface of the ferroelectric HZO film and the higher PMA temperature further improves the crystal quality. We found that wake-up tends to happen for both types of samples with lower PMA temperature, indicating the possible higher dependence of 'wake-up' on crystallinity. Nevertheless, C-ALD and higher PMA temperature are both required to prevent early breakdown. C-ALD samples combined with 600 °C PMA showed the excellent remanent polarization (2Pr) of 53 μC/cm2, endurance properties of 1011 cycles, and outstanding time-dependent dielectric breakdown (TDDB) characteristics.