Effects of Annealing Temperature on TiN&#x002F;Hf0.5Zr0.5O2&#x002F;TiN Ferroelectric Capacitor Prepared by <italic>In-situ</italic> like Consecutive Atomic Layer Deposition

Yan Kui Liang, Yi Shuo Huang, Li Chi Peng, Tsung Ying Yang, Bo Feng Young, Chun Chieh Lu, Sai Hooi Yeong, Yu Ming Lin, Chun Jung Su, Edward Yi Chang, Chun Hsiung Lin

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this letter, the ferroelectric characteristics and reliability of TiN&#x002F;Hf0.5Zr0.5O2&#x002F;TiN Metal-Ferroelectric-Metal (MFM) capacitor fabricated using the <italic>&#x2018;&#x2018;in-situ&#x2019;&#x2019;</italic> like consecutive atomic layer deposition (<italic>C-ALD</italic>) and the <italic>&#x201C;ex-situ&#x201D;</italic> deposition techniques are compared for different post metal annealing (PMA) temperatures. We suggested that <italic>C-ALD</italic> deposition improves the interface of the ferroelectric HZO film and the higher PMA temperature further improves the crystal quality. We found that <italic>wake-up</italic> tends to happen for both types of samples with lower PMA temperature, indicating the possible higher dependence of <italic>&#x201C;wake-up&#x201D;</italic> on crystallinity. Nevertheless, <italic>C-ALD</italic> and higher PMA temperature are both required to prevent early breakdown. <italic>C-ALD</italic> samples combined with 600 &#x00B0;C PMA showed the excellent remanent polarization (2Pr) of 53 &#x03BC;C&#x002F;cm2, endurance properties of 1011 cycles, and outstanding time-dependent dielectric breakdown (TDDB) characteristics.

原文English
頁(從 - 到)1-4
頁數4
期刊IEEE Transactions on Nanotechnology
DOIs
出版狀態Accepted/In press - 2022

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