Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Po Chun Liu*, Cheng Lun Lu, Yew-Chuhg Wu, Ji Hao Cheng, Hao Ouyang

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

原文English
頁(從 - 到)4831-4833
頁數3
期刊Applied Physics Letters
85
發行號21
DOIs
出版狀態Published - 1 11月 2004

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