Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Po Chun Liu; Cheng Lun Lu; Yew-Chuhg Wu; Ji Hao Cheng; Hao Ouyang

doi:10.1063/1.1823592

Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Po Chun Liu^*, Cheng Lun Lu, Yew-Chuhg Wu, Ji Hao Cheng, Hao Ouyang

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材料科學與工程學系

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10 引文斯高帕斯（Scopus）

摘要

The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

原文	English
頁（從 - 到）	4831-4833
頁數	3
期刊	Applied Physics Letters
卷	85
發行號	21
DOIs	https://doi.org/10.1063/1.1823592
出版狀態	Published - 1 11月 2004

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10.1063/1.1823592

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title = "Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers",

abstract = "The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.",

author = "Liu, {Po Chun} and Lu, {Cheng Lun} and Yew-Chuhg Wu and Cheng, {Ji Hao} and Hao Ouyang",

year = "2004",

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AU - Liu, Po Chun

AU - Lu, Cheng Lun

AU - Wu, Yew-Chuhg

AU - Cheng, Ji Hao

AU - Ouyang, Hao

PY - 2004/11/1

Y1 - 2004/11/1

N2 - The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

AB - The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

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DO - 10.1063/1.1823592

M3 - Article

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EP - 4833

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

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