Effects of Annealing on Ferroelectric Hafnium-Zirconium-Oxide-Based Transistor Technology

Keyphrases

• Gate Leakage Current 100%
• Microwave Annealing 100%
• Transistor Technology 100%
• Annealing Effect 100%
• Oxide-based 100%
• Hafnium Zirconium Oxide 100%
• Rapid Thermal Annealing 66%
• Annealing 33%
• Dielectric 33%
• Low Thermal Budget 33%
• Annealing Temperature 33%
• Annealing Conditions 33%
• Annealing Process 33%
• Remanent Polarization 33%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 33%
• Polarization Field 33%
• Interface State Density 33%
• Ferroelectric Field-effect Transistor (FeFET) 33%
• Electric Field Characteristics 33%
• HfZrOx 33%
• Metal-insulator-metal Devices 33%

Material Science

• Ferroelectric Material 100%
• Transistor 100%
• Annealing 100%
• Zirconia 100%
• Hafnium 100%
• Density 33%
• Capacitor 33%
• Metal Oxide 33%
• Oxide Semiconductor 33%
• Dielectric Material 33%

Engineering

• Rapid Thermal Annealing 100%
• Interface State 50%
• Dielectrics 50%
• Annealing Temperature 50%
• Metal-Insulator-Metal 50%
• Metal Oxide Semiconductor 50%
• Annealing Effect 50%
• Electric Field 50%