Effects of Annealing on Ferroelectric Hafnium-Zirconium-Oxide-Based Transistor Technology

Yi Hsuan Chen, Chun-Jung Su, Chen-Ming Hu, Tian-Li Wu*

*此作品的通信作者

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

In this letter, we investigate annealing effects in ferroelectric HfZrOx dielectric in metal-insulator-metal devices and metal-oxide-semiconductor capacitors by comparing two annealing methods: rapid thermal annealing (RTA) and microwave annealing (MWA). The tradeoff characteristics between the annealing conditions, polarization-electric field characteristics, gate leakage current, and interface state density Dit) are discussed. We show that: 1) a positive correlation between the remanent polarization (Pr), the gate leakage current, and Dit as the annealing temperature (RTA) and the annealing power (MWA) increase and 2) the MWA is promising for ferroelectric transistors technology, since its low thermal budget can minimize Dit and avoid increase in the gate leakage current.

原文English
文章編號8629290
頁(從 - 到)467-470
頁數4
期刊IEEE Electron Device Letters
40
發行號3
DOIs
出版狀態Published - 1 3月 2019

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