Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Engineering & Materials Science

• Buffer layers 100%
• Heterojunctions 91%
• High electron mobility transistors 81%
• Silicon 55%
• Two dimensional electron gas 41%
• Electron mobility 36%
• Organic chemicals 36%
• Metals 30%
• Chemical vapor deposition 27%
• Insertion losses 24%
• Crystals 23%
• Semiconductor materials 20%
• Surface roughness 19%

Physics & Astronomy

• high electron mobility transistors 72%
• buffers 59%
• radio frequencies 40%
• silicon 37%
• performance 30%
• MIS (semiconductors) 26%
• electron mobility 24%
• insertion loss 23%
• electron gas 22%
• metalorganic chemical vapor deposition 22%
• surface roughness 19%
• low frequencies 16%
• saturation 16%
• crystals 11%

Chemical Compounds

• Electron Mobility 83%
• Superlattice 72%
• Buffer Solution 45%
• Application 22%
• Two-Dimensional Electron Gas 17%
• Surface Roughness 10%