Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal-oxide-semiconductor field-effect transistors

Sekhar Reddy Kola, Yi-Ming Li*, Narasimhulu Thoti

*此作品的通信作者

研究成果: Article › 同行評審

14 引文 斯高帕斯（Scopus）

指紋

深入研究「Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal-oxide-semiconductor field-effect transistors」主題。共同形成了獨特的指紋。

Keyphrases

Material Science

Engineering