Effectiveness of Si seed for selective SiGe epitaxial deposition in recessed source and drain for locally strained pMOS application

Po Lun Cheng; Chin I. Liao; Hou Ren Wu; Yi G. Chen; Chin Cheng Chien; Chan Lon Yang; S. F. Tzou; Jinsong Tang; Yonah Cho; Errol Sanchez; Vincent C. Chang; Tony Fu; Wen-Syang Hsu

doi:10.1149/1.2355817

Effectiveness of Si seed for selective SiGe epitaxial deposition in recessed source and drain for locally strained pMOS application

Po Lun Cheng^*, Chin I. Liao, Hou Ren Wu, Yi G. Chen, Chin Cheng Chien, Chan Lon Yang, S. F. Tzou, Jinsong Tang, Yonah Cho, Errol Sanchez, Vincent C. Chang, Tony Fu, Wen-Syang Hsu

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機械工程學系

研究成果: Conference article › 同行評審

摘要

A thin layer of Si seed was employed to help nucleate low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recessed interface. copyright The Electrochemical Society.

原文	English
頁（從 - 到）	245-248
頁數	4
期刊	ECS Transactions
卷	3
發行號	7
DOIs	https://doi.org/10.1149/1.2355817
出版狀態	Published - 1 12月 2006
事件	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, 墨西哥持續時間: 29 10月 2006 → 3 11月 2006

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title = "Effectiveness of Si seed for selective SiGe epitaxial deposition in recessed source and drain for locally strained pMOS application",

abstract = "A thin layer of Si seed was employed to help nucleate low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recessed interface. copyright The Electrochemical Society.",

author = "Cheng, {Po Lun} and Liao, {Chin I.} and Wu, {Hou Ren} and Chen, {Yi G.} and Chien, {Chin Cheng} and Yang, {Chan Lon} and Tzou, {S. F.} and Jinsong Tang and Yonah Cho and Errol Sanchez and Chang, {Vincent C.} and Tony Fu and Wen-Syang Hsu",

year = "2006",

month = dec,

day = "1",

doi = "10.1149/1.2355817",

language = "English",

volume = "3",

pages = "245--248",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

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note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

TY - JOUR

T1 - Effectiveness of Si seed for selective SiGe epitaxial deposition in recessed source and drain for locally strained pMOS application

AU - Cheng, Po Lun

AU - Liao, Chin I.

AU - Wu, Hou Ren

AU - Chen, Yi G.

AU - Chien, Chin Cheng

AU - Yang, Chan Lon

AU - Tzou, S. F.

AU - Tang, Jinsong

AU - Cho, Yonah

AU - Sanchez, Errol

AU - Chang, Vincent C.

AU - Fu, Tony

AU - Hsu, Wen-Syang

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A thin layer of Si seed was employed to help nucleate low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recessed interface. copyright The Electrochemical Society.

AB - A thin layer of Si seed was employed to help nucleate low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recessed interface. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33846967488&partnerID=8YFLogxK

U2 - 10.1149/1.2355817

DO - 10.1149/1.2355817

M3 - Conference article

AN - SCOPUS:33846967488

SN - 1938-5862

VL - 3

SP - 245

EP - 248

JO - ECS Transactions

JF - ECS Transactions

IS - 7

T2 - SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Effectiveness of Si seed for selective SiGe epitaxial deposition in recessed source and drain for locally strained pMOS application

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