Effective surface treatments for selective epitaxial SiGe growth in locally strained pMOSFETs

Keyphrases

• SiGe 100%
• Epitaxial 100%
• PMOSFET 100%
• Surface Treatment 100%
• Effective Surface 100%
• Epitaxial Film 60%
• Film Quality 40%
• Pre-cleaning 40%
• Dry Surface 40%
• Diluted HF 40%
• Low Temperature 20%
• CMOS Process 20%
• Si Substrate 20%
• Tight 20%
• Order of Magnitude 20%
• Film Morphology 20%
• Process Window 20%
• Substrate Interface 20%
• Hard Mask 20%
• Thermal Budget 20%
• Epitaxial Growth 20%
• Seed Layer 20%
• Embedded SiGe 20%
• Film Growth 20%
• Dopant Diffusion 20%
• Growth Areas 20%
• SiGe Film 20%
• Residual Contaminants 20%
• Peak Concentration 20%
• Ozonated Water 20%
• Profile Quality 20%
• SiGe pMOSFETs 20%
• Wet Clean 20%
• SIMS Profile 20%
• Device Wafer 20%
• Wet Surface Treatment 20%
• Damage Accumulation 20%
• Chemical Budget 20%
• Clean Method 20%
• Chemical Residues 20%

Engineering

• Epitaxial Film 100%
• Film Quality 66%
• Dopants 33%
• Si Substrate 33%
• Low-Temperature 33%
• Process Window 33%
• Substrate Interface 33%
• Seed Layer 33%
• Process Step 33%
• Growth Surface 33%
• Si Surface 33%
• Chemical Treatment 33%
• Device Wafer 33%

Material Science

• Epitaxial Film 100%
• Surface Treatment 100%
• Film 66%
• Doping (Additives) 33%
• Nucleation 33%
• Epitaxy 33%
• Secondary Ion Mass Spectrometry 33%
• Film Growth 33%
• Surface (Surface Science) 33%