For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer (Alq3-LiF-Al), LiF and Mg inserted between ITO and Alq3, respectively. We discovered that 1 nm Mg afforded the highest efficiency.
|頁（從 - 到）||972-974|
|期刊||Proceedings of International Meeting on Information Display|
|出版狀態||Published - 1 十二月 2006|
|事件||5th International Meeting on Information Display - Seoul, Korea, Republic of|
持續時間: 19 七月 2005 → 23 七月 2005