Effective structure of electron injection from ITO bottom cathode for inverted OLED

Ta Ya Chu*, Szu Yi Chen, Jenn-Fang Chen, Chin H. Chen

*此作品的通信作者

研究成果: Conference article同行評審

摘要

For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer (Alq3-LiF-Al), LiF and Mg inserted between ITO and Alq3, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

原文English
頁(從 - 到)972-974
頁數3
期刊Proceedings of International Meeting on Information Display
2
出版狀態Published - 1 十二月 2006
事件5th International Meeting on Information Display - Seoul, Korea, Republic of
持續時間: 19 七月 200523 七月 2005

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