Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

Y. S. Mor, T. C. Chang*, Po-Tsun Liu, T. M. Tsai, C. W. Chen, S. T. Yan, C. J. Chu, W. F. Wu, Fu-Ming Pan, Water Lur, S. M. Sze

*此作品的通信作者

研究成果: Conference article同行評審

90 引文 斯高帕斯(Scopus)

摘要

Hexamethyldisilazane (HMDS) treatment was provided to improve the quality of the porous organosilicate glass (POSG) film after the POSG film undergoes the photoresist (PR) removal process. In addition, O2 plasma ashing were investigated to realize the impact of integrated processes on the dielectric film quality. Furthermore, the electrical measurement and material analysis were used to evaluate the POSG film during the PR removal process. The resultant data was analyzed in detail.

原文English
頁(從 - 到)1334-1338
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號4
DOIs
出版狀態Published - 7月 2002
事件Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
持續時間: 6 1月 200210 1月 2002

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