Hexamethyldisilazane (HMDS) treatment was provided to improve the quality of the porous organosilicate glass (POSG) film after the POSG film undergoes the photoresist (PR) removal process. In addition, O2 plasma ashing were investigated to realize the impact of integrated processes on the dielectric film quality. Furthermore, the electrical measurement and material analysis were used to evaluate the POSG film during the PR removal process. The resultant data was analyzed in detail.
|頁（從 - 到）||1334-1338|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 1 7月 2002|
|事件||Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States|
持續時間: 6 1月 2002 → 10 1月 2002