Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

Y. S. Mor; T. C. Chang; Po-Tsun Liu; T. M. Tsai; C. W. Chen; S. T. Yan; C. J. Chu; W. F. Wu; Fu-Ming Pan; Water Lur; S. M. Sze

doi:10.1116/1.1488645

Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

Y. S. Mor, T. C. Chang^*, Po-Tsun Liu, T. M. Tsai, C. W. Chen, S. T. Yan, C. J. Chu, W. F. Wu, Fu-Ming Pan, Water Lur, S. M. Sze

^*此作品的通信作者

研究成果: Conference article › 同行評審

90 引文斯高帕斯（Scopus）

摘要

Hexamethyldisilazane (HMDS) treatment was provided to improve the quality of the porous organosilicate glass (POSG) film after the POSG film undergoes the photoresist (PR) removal process. In addition, O₂ plasma ashing were investigated to realize the impact of integrated processes on the dielectric film quality. Furthermore, the electrical measurement and material analysis were used to evaluate the POSG film during the PR removal process. The resultant data was analyzed in detail.

原文	English
頁（從 - 到）	1334-1338
頁數	5
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	20
發行號	4
DOIs	https://doi.org/10.1116/1.1488645
出版狀態	Published - 7月 2002
事件	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, 美國持續時間: 6 1月 2002 → 10 1月 2002

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Mor, Y. S., Chang, T. C., Liu, P.-T., Tsai, T. M., Chen, C. W., Yan, S. T., Chu, C. J., Wu, W. F., Pan, F.-M., Lur, W., & Sze, S. M. (2002). Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(4), 1334-1338. https://doi.org/10.1116/1.1488645

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title = "Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment",

abstract = "Hexamethyldisilazane (HMDS) treatment was provided to improve the quality of the porous organosilicate glass (POSG) film after the POSG film undergoes the photoresist (PR) removal process. In addition, O2 plasma ashing were investigated to realize the impact of integrated processes on the dielectric film quality. Furthermore, the electrical measurement and material analysis were used to evaluate the POSG film during the PR removal process. The resultant data was analyzed in detail.",

author = "Mor, {Y. S.} and Chang, {T. C.} and Po-Tsun Liu and Tsai, {T. M.} and Chen, {C. W.} and Yan, {S. T.} and Chu, {C. J.} and Wu, {W. F.} and Fu-Ming Pan and Water Lur and Sze, {S. M.}",

year = "2002",

month = jul,

doi = "10.1116/1.1488645",

language = "English",

volume = "20",

pages = "1334--1338",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

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TY - JOUR

T1 - Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

AU - Mor, Y. S.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Tsai, T. M.

AU - Chen, C. W.

AU - Yan, S. T.

AU - Chu, C. J.

AU - Wu, W. F.

AU - Pan, Fu-Ming

AU - Lur, Water

AU - Sze, S. M.

PY - 2002/7

Y1 - 2002/7

N2 - Hexamethyldisilazane (HMDS) treatment was provided to improve the quality of the porous organosilicate glass (POSG) film after the POSG film undergoes the photoresist (PR) removal process. In addition, O2 plasma ashing were investigated to realize the impact of integrated processes on the dielectric film quality. Furthermore, the electrical measurement and material analysis were used to evaluate the POSG film during the PR removal process. The resultant data was analyzed in detail.

AB - Hexamethyldisilazane (HMDS) treatment was provided to improve the quality of the porous organosilicate glass (POSG) film after the POSG film undergoes the photoresist (PR) removal process. In addition, O2 plasma ashing were investigated to realize the impact of integrated processes on the dielectric film quality. Furthermore, the electrical measurement and material analysis were used to evaluate the POSG film during the PR removal process. The resultant data was analyzed in detail.

UR - http://www.scopus.com/inward/record.url?scp=0035982532&partnerID=8YFLogxK

U2 - 10.1116/1.1488645

DO - 10.1116/1.1488645

M3 - Conference article

AN - SCOPUS:0035982532

SN - 1071-1023

VL - 20

SP - 1334

EP - 1338

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

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