Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

C. W. Yang; Y. K. Fang; S. F. Chen; C. Y. Lin; M. F. Wang; Y. M. Lin; Tuo-Hung Hou; L. G. Yao; S. C. Chen; M. S. Liang

doi:10.1049/el:20030278

Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

C. W. Yang^*, Y. K. Fang, S. F. Chen, C. Y. Lin, M. F. Wang, Y. M. Lin, Tuo-Hung Hou, L. G. Yao, S. C. Chen, M. S. Liang

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH₃ nitridation, were investigated. The results show that with NH₃ nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO₂ (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH₃ nitridation.

原文	English
頁（從 - 到）	421-422
頁數	2
期刊	Electronics Letters
卷	39
發行號	5
DOIs	https://doi.org/10.1049/el:20030278
出版狀態	Published - 6 3月 2003

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title = "Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation",

abstract = "The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.",

author = "Yang, {C. W.} and Fang, {Y. K.} and Chen, {S. F.} and Lin, {C. Y.} and Wang, {M. F.} and Lin, {Y. M.} and Tuo-Hung Hou and Yao, {L. G.} and Chen, {S. C.} and Liang, {M. S.}",

year = "2003",

month = mar,

day = "6",

doi = "10.1049/el:20030278",

language = "English",

volume = "39",

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TY - JOUR

T1 - Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

AU - Yang, C. W.

AU - Fang, Y. K.

AU - Chen, S. F.

AU - Lin, C. Y.

AU - Wang, M. F.

AU - Lin, Y. M.

AU - Hou, Tuo-Hung

AU - Yao, L. G.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2003/3/6

Y1 - 2003/3/6

N2 - The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.

AB - The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.

UR - http://www.scopus.com/inward/record.url?scp=0037422086&partnerID=8YFLogxK

U2 - 10.1049/el:20030278

DO - 10.1049/el:20030278

M3 - Article

AN - SCOPUS:0037422086

SN - 0013-5194

VL - 39

SP - 421

EP - 422

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

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