Effective control of flat-band voltage in HfO2 gate dielectric with la2O3 incorporation

K. Okamoto*, M. Adachi, K. Kakushima, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai

*此作品的通信作者

研究成果: Conference contribution同行評審

15 引文 斯高帕斯(Scopus)

摘要

The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V compared to that of HfO2/Si or HfO2/SiO2. Stacked MOSCAPs were fabricated and the C-V characteristics show that flat-band voltage shift is mainly determined by high-k film which is in contact to Si or SiO2. Using HfLaO with different La concentration, the amount of shift in flat-band voltage could be well controlled, which might be due to the diffusion or pile-up of La atoms to the interface over 420°C. This study provides further insights in controlling the threshold voltage Of HfO2 based oxides.

原文English
主出版物標題ESSDERC07 - 2007 37th European Solid State Device Research Conference
發行者IEEE Computer Society
頁面199-202
頁數4
ISBN(列印)1424411238, 9781424411238
DOIs
出版狀態Published - 2007
事件ESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany
持續時間: 11 九月 200713 九月 2007

出版系列

名字ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
2007

Conference

ConferenceESSDERC 2007 - 37th European Solid-State Device Research Conference
國家/地區Germany
城市Munich
期間11/09/0713/09/07

指紋

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