Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

Y. J. Lai; C. S. Yang; Wei-Kuo Chen; M. C. Lee; Wen-Hao Chang; Wu-Ching Chou; J. S. Wang; W. J. Huang; Erik S. Jeng

doi:10.1063/1.2696585

Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

Y. J. Lai, C. S. Yang, Wei-Kuo Chen, M. C. Lee, Wen-Hao Chang, Wu-Ching Chou^*, J. S. Wang, W. J. Huang, Erik S. Jeng

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電子物理學系

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2 引文斯高帕斯（Scopus）

摘要

The ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study.

原文	English
文章編號	083116
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	90
發行號	8
DOIs	https://doi.org/10.1063/1.2696585
出版狀態	Published - 19 2月 2007

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abstract = "The ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study.",

author = "Lai, {Y. J.} and Yang, {C. S.} and Wei-Kuo Chen and Lee, {M. C.} and Wen-Hao Chang and Wu-Ching Chou and Wang, {J. S.} and Huang, {W. J.} and Jeng, {Erik S.}",

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AU - Lai, Y. J.

AU - Yang, C. S.

AU - Chen, Wei-Kuo

AU - Lee, M. C.

AU - Chang, Wen-Hao

AU - Chou, Wu-Ching

AU - Wang, J. S.

AU - Huang, W. J.

AU - Jeng, Erik S.

PY - 2007/2/19

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N2 - The ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study.

AB - The ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study.

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Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

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