Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes

Chin Yuan Hsu*, Wen How Lan, Yew-Chuhg Wu

*此作品的通信作者

研究成果: Article同行評審

72 引文 斯高帕斯(Scopus)

摘要

The influences of thermal annealing on electrical properties of GaN LEDs were investigated. After annealing above 700°C, the electrical short circuit behavior was observed. The results implied direct evidences that the migration and indiffusion of Ni and Au along the TDs cause the short circuit characteristics of the p-n junction at high temperatures.

原文English
頁(從 - 到)2447-2449
頁數3
期刊Applied Physics Letters
83
發行號12
DOIs
出版狀態Published - 22 9月 2003

指紋

深入研究「Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes」主題。共同形成了獨特的指紋。

引用此