Effect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodes

Yew-Chuhg Wu; Cheng Liao; Wei Chih Peng

doi:10.1149/1.2760320

Effect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodes

Yew-Chuhg Wu^*, Cheng Liao, Wei Chih Peng

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened p-GaN surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undoped-GaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED.

原文	English
期刊	Electrochemical and Solid-State Letters
卷	10
發行號	10
DOIs	https://doi.org/10.1149/1.2760320
出版狀態	Published - 17 8月 2007

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abstract = "Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as {"}PR-LED{"} were LEDs with roughened p-GaN surface. {"}DRM-LED{"} and {"}DRSM-LED{"} were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undoped-GaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED.",

author = "Yew-Chuhg Wu and Cheng Liao and Peng, {Wei Chih}",

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T1 - Effect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodes

AU - Wu, Yew-Chuhg

AU - Liao, Cheng

AU - Peng, Wei Chih

PY - 2007/8/17

Y1 - 2007/8/17

N2 - Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened p-GaN surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undoped-GaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED.

AB - Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened p-GaN surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undoped-GaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED.

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DO - 10.1149/1.2760320

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

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ER -

Effect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodes

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