@inproceedings{17b6af3f4b794d9f9b065e5696dfeea5,
title = "Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes",
abstract = "A new scheme structure of ITO/Ni/Ag/Ni mirror was presented to get high reflectance after annealing. At 470nm, the reflectance was as high as 90% after annealing at 270°C for 1 hour.",
author = "Huang, {Ping Wei} and Yew-Chuhg Wu",
year = "2008",
month = dec,
day = "1",
doi = "10.1149/1.2983163",
language = "English",
isbn = "9781566776530",
series = "ECS Transactions",
number = "7",
pages = "97--101",
booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9",
edition = "7",
note = "State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}