Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

M. Eizenberg*, G. Ottaviani, King-Ning Tu

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22 引文 斯高帕斯(Scopus)

摘要

We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd20W80 alloys, Schottky contacts of Pd2Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt20W80 alloys. For Pd-rich Pd80W20 and Pt-rich Pt80W 20 alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.

原文English
頁(從 - 到)87-89
頁數3
期刊Applied Physics Letters
37
發行號1
DOIs
出版狀態Published - 1 12月 1980

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