Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications

Pei-Wen Li*, Wei Ming Liao, Ching Chieh Shih, Tine Shang Kuo, Li Shyue Lai, Yang Tai Tseng, Ming J. Tsai

*此作品的通信作者

研究成果: Letter同行評審

3 引文 斯高帕斯(Scopus)

摘要

We have investigated the effect of substrate biasing on the subthreshold characteristics and noise levels of Si/Si1-xGex (x = 0, 0.15, 0.3) heterostructure MOSFETs. A detailed analysis of the dependence of threshold voltage, off-state current, and low-frequency noise level on the substrate-source (Vbs) biasing showed that SiGe heterostructure MOSFETs offer a significant speed advantage, an extended subthreshold operation region, a reduced noise level, and reduced bulk potential sensitivity compared to Si bulk devices. These experimental results demonstrate that SiGe heterostructure MOSFETs render a promising extension to the CMOS technologies at the low-power limit of operation, eventually making the microrpower implementation of radio frequency (RF) functions feasible.

原文English
頁(從 - 到)454-456
頁數3
期刊IEEE Electron Device Letters
24
發行號7
DOIs
出版狀態Published - 1 7月 2003

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