Effect of sputtered AlN location on the growth mechanism of GaN

Pei Yu Wu, Jhen Hong Li, Lung Hsing Hsu, Chia-Yen Huang, Yuh Jen Cheng, Hao-Chung Kuo, Yew-Chuhg Wu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail.

原文American English
頁(從 - 到)R131-R134
頁數4
期刊ECS Journal of Solid State Science and Technology
6
發行號9
DOIs
出版狀態Published - 1 1月 2017

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