@article{8770d6589e2c49b496f58c4bab3ef3f9,
title = "Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric",
abstract = "Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO2. It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.",
author = "Yang, {C. W.} and Fang, {Y. K.} and Chen, {C. H.} and Chen, {S. F.} and Lin, {C. Y.} and Lin, {C. S.} and Wang, {M. F.} and Lin, {Y. M.} and Tuo-Hung Hou and Chen, {C. H.} and Yao, {L. G.} and Chen, {S. C.} and Liang, {M. S.}",
year = "2003",
month = jul,
day = "14",
doi = "10.1063/1.1592634",
language = "English",
volume = "83",
pages = "308--310",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "2",
}