Effect of passivation layer on InGaZnO thin-film transistors with hybrid silver nanowires as source and drain electrodes

Chien Hsien Yu, Hung Chi Wu, Chao-Hsin Chien

    研究成果: Article同行評審

    4 引文 斯高帕斯(Scopus)

    摘要

    InGaZnO (IGZO) thin-film transistors (TFTs) with hybrid silver nanowires (hybrid-AgNWs) as the source and drain electrodes exhibit superior performance according to the on/off current ratio (≈106), subthreshold swing (SS) (367mV/decade), and mobility (15.6cm2V-1 s-1). The transfer and output characteristics of nanowire-based electrodes are comparable with those of titanium electrodes. The devices are fabricated on a plastic substrate and are highly transparent (>70%) and flexible. The device performance is severely degraded during operation in air, especially under high humidity conditions, and progressive deterioration resulting from water molecule diffusion leads to a high current density when the device is swept. Hence, introducing a passivation layer on the hybrid-AgNW electrodes is imperative.

    原文English
    文章編號081101
    期刊Japanese Journal of Applied Physics
    54
    發行號8
    DOIs
    出版狀態Published - 1 八月 2015

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