Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

Yi Xuan Chen; Yi Lin Wang; Fu Jyuan Li; Shu-Jui Chang; Tsung En Lee; Chao Ching Cheng; Meng Chien Lee; Hui Hsuan Li; Yu Hsien Lin; Chao Hsin Chien

doi:10.1109/TNANO.2024.3381478

Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

Yi Xuan Chen, Yi Lin Wang, Fu Jyuan Li, Shu-Jui Chang, Tsung En Lee, Chao Ching Cheng, Meng Chien Lee, Hui Hsuan Li, Yu Hsien Lin^*, Chao Hsin Chien^*

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O₂ plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (S.S.) of 122.5 mV/decade, an I_on/I_off of around 4.7×10⁸, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.

原文	English
頁（從 - 到）	299-302
頁數	4
期刊	IEEE Transactions on Nanotechnology
卷	23
DOIs	https://doi.org/10.1109/TNANO.2024.3381478
出版狀態	Published - 2024

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10.1109/TNANO.2024.3381478

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@article{b25048d0c4e34870bb71339d6e4cc86d,

title = "Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors",

abstract = "In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O2 plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (S.S.) of 122.5 mV/decade, an Ion/Ioff of around 4.7×108, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.",

keywords = "IWO film, oxygen treatment, reliability, RTO",

author = "Chen, {Yi Xuan} and Wang, {Yi Lin} and Li, {Fu Jyuan} and Shu-Jui Chang and Lee, {Tsung En} and Cheng, {Chao Ching} and Lee, {Meng Chien} and Li, {Hui Hsuan} and Lin, {Yu Hsien} and Chien, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2024",

doi = "10.1109/TNANO.2024.3381478",

language = "English",

volume = "23",

pages = "299--302",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

AU - Chen, Yi Xuan

AU - Wang, Yi Lin

AU - Li, Fu Jyuan

AU - Chang, Shu-Jui

AU - Lee, Tsung En

AU - Cheng, Chao Ching

AU - Lee, Meng Chien

AU - Li, Hui Hsuan

AU - Lin, Yu Hsien

AU - Chien, Chao Hsin

PY - 2024

Y1 - 2024

N2 - In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O2 plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (S.S.) of 122.5 mV/decade, an Ion/Ioff of around 4.7×108, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.

AB - In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O2 plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (S.S.) of 122.5 mV/decade, an Ion/Ioff of around 4.7×108, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.

KW - IWO film

KW - oxygen treatment

KW - reliability

KW - RTO

UR - http://www.scopus.com/inward/record.url?scp=85189309351&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2024.3381478

DO - 10.1109/TNANO.2024.3381478

M3 - Article

AN - SCOPUS:85189309351

SN - 1536-125X

VL - 23

SP - 299

EP - 302

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

ER -

Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

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