Effect of nitrogen incorporation into InAs layer in InAs/InGaAs self-assembled quantum dots

Jenn-Fang Chen*, Ru Shang Hsiao, Yu Chih Chen, Yi Ping Chen, Ming Ta Hsieh, Jyh Shyang Wang, Jim Y. Chi

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We present the results of nitrogen incorporation into the InAs layer in InAs/InGaAs quantum dots (QDs). We show that this incorporation causes an asymmetric photoluminescence (PL) line shape and abnormally large redshift of the PL peak from the quantum dots as temperature increases. In addition, this incorporation causes a large series resistance and a rapid increase in reverse current at a bias corresponding to the QD region. This effect is due to the formation of a deep trap at 0.34-0.41 eV, which depletes the carriers in the QD region. This depletion gives rise to a geometric resistance-capacitance time-constant effect for the ac conductivity of the free electrons in the top GaAs layer. This trap markedly alters the emission properties of the QD structure. The ac conductivity of the QD structure is governed by the thermal activation of trapped electrons rather than the electron emission from the QD confined states. This incorporation significantly increases the electron emission time from the QD region and, thus, can be used intentionally to modify the emission properties of the QD structure.

原文English
頁(從 - 到)6395-6398
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
發行號9 A
DOIs
出版狀態Published - 8 9月 2005

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