摘要
Cu direct bonding has been achieved at 120 C by using (111)-oriented nanotwinned Cu because it has the fastest surface diffusivity. In this study, the effect of nanotwin boundary on the Cu bonding was investigated by using two types of (111)-oriented Cu films: sputtered 97% (111)-oriented Cu films and electroplated nano-twinned-Cu films. Artificial voids were introduced at bonded interfaces by bonding an etched-Cu sample to an unetched-Cu. The evolutions of interfacial voids were investigated at 150 C and 200 C. It was found that nanotwin boundary could enhance the transport of Cu atoms, thus enhance Cu-Cu direct bonding.
原文 | English |
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文章編號 | 074001 |
頁數 | 5 |
期刊 | ECS Journal of Solid State Science and Technology |
卷 | 10 |
發行號 | 7 |
DOIs | |
出版狀態 | Published - 1 7月 2021 |