Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate

M. C. Wang*, T. C. Chang, Po-Tsun Liu, S. W. Tsao, J. R. Chen, Jian Shu Wir, Chin Jen Huang, Yu Hung Chen, Liang Tang Wang, Yih Rong Luo, I. Hsuan Peng, Te Chi Wong, Ya Lin Liu, Jung Fang Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this paper, the effect of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190°C exhibited a field-effect mobility of 0.1 cm2/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain.

原文English
主出版物標題Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
編輯H.P. David Shieh, F.C. Chen
頁面494-496
頁數3
出版狀態Published - 6月 2005
事件International Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
持續時間: 21 2月 200524 2月 2005

出版系列

名字International Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
國家/地區Japan
城市Taipei
期間21/02/0524/02/05

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