@inproceedings{2e6fbabd41ac4d8e920799e4d558711a,
title = "Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate",
abstract = "In this paper, the effect of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190°C exhibited a field-effect mobility of 0.1 cm2/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain.",
keywords = "A-Si TFT, Bending strain, Metal foil",
author = "Wang, {M. C.} and Chang, {T. C.} and Po-Tsun Liu and Tsao, {S. W.} and Chen, {J. R.} and Wir, {Jian Shu} and Huang, {Chin Jen} and Chen, {Yu Hung} and Wang, {Liang Tang} and Luo, {Yih Rong} and Peng, {I. Hsuan} and Wong, {Te Chi} and Liu, {Ya Lin} and Chang, {Jung Fang}",
year = "2005",
month = jun,
language = "English",
isbn = "9572852221",
series = "International Display Manufacturing Conference and Exhibition, IDMC'05",
pages = "494--496",
editor = "{David Shieh}, H.P. and F.C. Chen",
booktitle = "Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05",
note = "International Display Manufacturing Conference and Exhibition, IDMC'05 ; Conference date: 21-02-2005 Through 24-02-2005",
}