Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance

Yuan Lin; Hsuan Yao Huang; You Chen Weng; Hao Chung Kuo; Chang Fu Dee; Chun Hsiung Lin; Edward Yi Chang

doi:10.1149/2162-8777/acfbb4

Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance

Yuan Lin^*, Hsuan Yao Huang, You Chen Weng, Hao Chung Kuo, Chang Fu Dee, Chun Hsiung Lin, Edward Yi Chang

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摘要

Highlight By integrating the local substrate removal process with the backside Al heat dissipation layer, we increased power-added efficiency from 38.93% to 48.47 at a frequency of 3.5 GHz. At 200 μs, the transient drain current ratio with and without stress voltage was measured at 0.914 for the conventional device and 0.997 for the LSR + Al device. The temperature-induced change in on-resistance (R_on) for the pure LSR devices is 10.08 mΩ °C, whereas the LSR devices with a 5 μm Al layer on the backside exhibit a much lower slope of 1.78

原文	English
文章編號	095005
期刊	ECS Journal of Solid State Science and Technology
卷	12
發行號	9
DOIs	https://doi.org/10.1149/2162-8777/acfbb4
出版狀態	Published - 9月 2023

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10.1149/2162-8777/acfbb4

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title = "Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance",

abstract = "Highlight By integrating the local substrate removal process with the backside Al heat dissipation layer, we increased power-added efficiency from 38.93% to 48.47 at a frequency of 3.5 GHz. At 200 μs, the transient drain current ratio with and without stress voltage was measured at 0.914 for the conventional device and 0.997 for the LSR + Al device. The temperature-induced change in on-resistance (Ron) for the pure LSR devices is 10.08 mΩ °C, whereas the LSR devices with a 5 μm Al layer on the backside exhibit a much lower slope of 1.78",

author = "Yuan Lin and Huang, {Hsuan Yao} and Weng, {You Chen} and Kuo, {Hao Chung} and Dee, {Chang Fu} and Lin, {Chun Hsiung} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited",

year = "2023",

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doi = "10.1149/2162-8777/acfbb4",

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T1 - Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance

AU - Lin, Yuan

AU - Huang, Hsuan Yao

AU - Weng, You Chen

AU - Kuo, Hao Chung

AU - Dee, Chang Fu

AU - Lin, Chun Hsiung

AU - Chang, Edward Yi

PY - 2023/9

Y1 - 2023/9

N2 - Highlight By integrating the local substrate removal process with the backside Al heat dissipation layer, we increased power-added efficiency from 38.93% to 48.47 at a frequency of 3.5 GHz. At 200 μs, the transient drain current ratio with and without stress voltage was measured at 0.914 for the conventional device and 0.997 for the LSR + Al device. The temperature-induced change in on-resistance (Ron) for the pure LSR devices is 10.08 mΩ °C, whereas the LSR devices with a 5 μm Al layer on the backside exhibit a much lower slope of 1.78

AB - Highlight By integrating the local substrate removal process with the backside Al heat dissipation layer, we increased power-added efficiency from 38.93% to 48.47 at a frequency of 3.5 GHz. At 200 μs, the transient drain current ratio with and without stress voltage was measured at 0.914 for the conventional device and 0.997 for the LSR + Al device. The temperature-induced change in on-resistance (Ron) for the pure LSR devices is 10.08 mΩ °C, whereas the LSR devices with a 5 μm Al layer on the backside exhibit a much lower slope of 1.78

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SN - 2162-8769

VL - 12

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 9

M1 - 095005

ER -

Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance

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