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Effect of intrinsic-parameter fluctuations on 16-nm-gate CMOS and current mirror circuit
Chun Yen Yiu
,
Yiming Li
*
, Ming Hung Han
, Kuo Fu Lee
, Thet Thet Khaing
, Hui Wen Cheng
, Zhong Cheng Su
*
此作品的通信作者
電機工程學系
研究成果
:
Conference contribution
›
同行評審
4
引文 斯高帕斯(Scopus)
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深入研究「Effect of intrinsic-parameter fluctuations on 16-nm-gate CMOS and current mirror circuit」主題。共同形成了獨特的指紋。
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Keyphrases
Complementary Metal Oxide Semiconductor
100%
Current Mirror Circuit
100%
Intrinsic Fluctuations
100%
Drive Current
40%
Metal-oxide-semiconductor Devices
40%
Random Dopant Fluctuation
40%
NMOS
20%
Metal Gate Work Function
20%
Aspect Ratio
20%
Device Characteristics
20%
PMOS
20%
Doping Profile
20%
Oxide Thickness Variation
20%
3D Devices
20%
Current Fluctuations
20%
Bulk FinFET
20%
Process Variation Effect
20%
Coupled Simulation
20%
Time Estimates
20%
Work Function Fluctuation
20%
Asymmetric Doping
20%
Engineering
Current Mirror
100%
Complementary Metal-Oxide-Semiconductor
100%
Intrinsic Parameter
100%
Dopants
40%
Complementary Metal-Oxide-Semiconductor Device
40%
Oxide Thickness
20%
Metal Gate
20%
Engineering
20%
Coupled Circuits
20%
Process Variation
20%
Aspect Ratio
20%
Material Science
Electronic Circuit
100%
Complementary Metal-Oxide-Semiconductor Device
100%
Doping (Additives)
28%
Oxide Compound
14%