TY - GEN
T1 - Effect of intrinsic-parameter fluctuations on 16-nm-gate CMOS and current mirror circuit
AU - Yiu, Chun Yen
AU - Li, Yiming
AU - Han, Ming Hung
AU - Lee, Kuo Fu
AU - Khaing, Thet Thet
AU - Cheng, Hui Wen
AU - Su, Zhong Cheng
PY - 2010
Y1 - 2010
N2 - This work, for the first time, estimates the influence of intrinsic-parameter fluctuations consisting of the metal-gate work-function fluctuation (WKF), the oxide-thickness fluctuation (OTF), the process-variation effect (PVE), and the random-dopant fluctuation (RDF) on 16-nm-gate complementary metal oxide semiconductor (CMOS) devices and circuit. Experimentally calibrated 3D device / circuit coupled simulation allows us to evaluate the effect of aforementioned fluctuations on CMOS devices' characteristics. Their impacts on the driving current of current mirror circuits are then explored. Variability suppression on RDF according to asymmetric doping profile engineering is thus advanced to mitigate the fluctuation. The normalized driving current fluctuations of current mirror circuit are reduced from 8.43% to 4.66% for the current mirror circuit made by NMOS and from 8.51% to 5.54% for the current mirror circuit made by PMOS, respectively. Furthermore, bulk FinFETs with an aspect ratio of 2 are implemented for suppressing these fluctuations.
AB - This work, for the first time, estimates the influence of intrinsic-parameter fluctuations consisting of the metal-gate work-function fluctuation (WKF), the oxide-thickness fluctuation (OTF), the process-variation effect (PVE), and the random-dopant fluctuation (RDF) on 16-nm-gate complementary metal oxide semiconductor (CMOS) devices and circuit. Experimentally calibrated 3D device / circuit coupled simulation allows us to evaluate the effect of aforementioned fluctuations on CMOS devices' characteristics. Their impacts on the driving current of current mirror circuits are then explored. Variability suppression on RDF according to asymmetric doping profile engineering is thus advanced to mitigate the fluctuation. The normalized driving current fluctuations of current mirror circuit are reduced from 8.43% to 4.66% for the current mirror circuit made by NMOS and from 8.51% to 5.54% for the current mirror circuit made by PMOS, respectively. Furthermore, bulk FinFETs with an aspect ratio of 2 are implemented for suppressing these fluctuations.
UR - http://www.scopus.com/inward/record.url?scp=79951846080&partnerID=8YFLogxK
U2 - 10.1109/NANO.2010.5697825
DO - 10.1109/NANO.2010.5697825
M3 - Conference contribution
AN - SCOPUS:79951846080
SN - 9781424470334
T3 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
SP - 798
EP - 801
BT - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
T2 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
Y2 - 17 August 2010 through 20 August 2010
ER -