Effect of intrinsic-parameter fluctuations on 16-nm-gate CMOS and current mirror circuit

Chun Yen Yiu, Yiming Li*, Ming Hung Han, Kuo Fu Lee, Thet Thet Khaing, Hui Wen Cheng, Zhong Cheng Su

*此作品的通信作者

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

This work, for the first time, estimates the influence of intrinsic-parameter fluctuations consisting of the metal-gate work-function fluctuation (WKF), the oxide-thickness fluctuation (OTF), the process-variation effect (PVE), and the random-dopant fluctuation (RDF) on 16-nm-gate complementary metal oxide semiconductor (CMOS) devices and circuit. Experimentally calibrated 3D device / circuit coupled simulation allows us to evaluate the effect of aforementioned fluctuations on CMOS devices' characteristics. Their impacts on the driving current of current mirror circuits are then explored. Variability suppression on RDF according to asymmetric doping profile engineering is thus advanced to mitigate the fluctuation. The normalized driving current fluctuations of current mirror circuit are reduced from 8.43% to 4.66% for the current mirror circuit made by NMOS and from 8.51% to 5.54% for the current mirror circuit made by PMOS, respectively. Furthermore, bulk FinFETs with an aspect ratio of 2 are implemented for suppressing these fluctuations.

原文English
主出版物標題2010 10th IEEE Conference on Nanotechnology, NANO 2010
頁面798-801
頁數4
DOIs
出版狀態Published - 2010
事件2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
持續時間: 17 八月 201020 八月 2010

出版系列

名字2010 10th IEEE Conference on Nanotechnology, NANO 2010

Conference

Conference2010 10th IEEE Conference on Nanotechnology, NANO 2010
國家/地區Korea, Republic of
城市Ilsan, Gyeonggi-Do
期間17/08/1020/08/10

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