@inproceedings{b4ea3cc361f54788b90674a415976ae6,
title = "Effect of InGaN/GaN multiple quantum wells with p-n quantum barriers on efficiency droop in blue light-emitting diodes",
abstract = "In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.",
author = "Wang, {Sheng Wen} and Lin, {Da Wei} and Lee, {Chia Yu} and Liu, {Che Yu} and Yu-Pin Lan and Hao-Chung Kuo and Wang, {Shing Chung}",
year = "2013",
month = jun,
day = "9",
doi = "10.1364/CLEO_AT.2013.JW2A.94",
language = "English",
isbn = "9781557529725",
series = "2013 Conference on Lasers and Electro-Optics, CLEO 2013",
publisher = "IEEE Computer Society",
booktitle = "2013 Conference on Lasers and Electro-Optics, CLEO 2013",
address = "美國",
note = "2013 Conference on Lasers and Electro-Optics, CLEO 2013 ; Conference date: 09-06-2013 Through 14-06-2013",
}