Effect of hydrogenation on deep-level traps in InP on GaAs

Y. F. Chen; K. C. Sung; Wei-Kuo Chen; Y. S. Lue

doi:10.1063/1.350687

Effect of hydrogenation on deep-level traps in InP on GaAs

Y. F. Chen^*, K. C. Sung, Wei-Kuo Chen, Y. S. Lue

^*此作品的通信作者

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 10 ¹⁵ cm^-3 for samples with a carrier concentration of 10¹⁶ cm^-3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 10¹⁴ cm^-3 and of the carrier concentration to 10¹⁵ cm^-3.

原文	English
頁（從 - 到）	509-511
頁數	3
期刊	Journal of Applied Physics
卷	71
發行號	1
DOIs	https://doi.org/10.1063/1.350687
出版狀態	Published - 1 12月 1992

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title = "Effect of hydrogenation on deep-level traps in InP on GaAs",

abstract = "Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 10 15 cm-3 for samples with a carrier concentration of 1016 cm-3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 1014 cm-3 and of the carrier concentration to 1015 cm-3.",

author = "Chen, {Y. F.} and Sung, {K. C.} and Wei-Kuo Chen and Lue, {Y. S.}",

year = "1992",

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T1 - Effect of hydrogenation on deep-level traps in InP on GaAs

AU - Chen, Y. F.

AU - Sung, K. C.

AU - Chen, Wei-Kuo

AU - Lue, Y. S.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 10 15 cm-3 for samples with a carrier concentration of 1016 cm-3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 1014 cm-3 and of the carrier concentration to 1015 cm-3.

AB - Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 10 15 cm-3 for samples with a carrier concentration of 1016 cm-3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 1014 cm-3 and of the carrier concentration to 1015 cm-3.

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U2 - 10.1063/1.350687

DO - 10.1063/1.350687

M3 - Article

AN - SCOPUS:0040179601

SN - 0021-8979

VL - 71

SP - 509

EP - 511

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Effect of hydrogenation on deep-level traps in InP on GaAs

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