Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

You Chen Weng, Ming Yao Hsiao, Chun Hsiung Lin, Yu-Pin Lan, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

摘要

A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.

原文English
文章編號3376
期刊Materials
16
發行號9
DOIs
出版狀態Published - 5月 2023

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