Effect of gate sinking on the device performance of the InGaP/AlGaAs/ InGaAs enhancement-mode PHEMT

L. H. Chu; Edward Yi Chang; Li Chang; Y. H. Wu; S. H. Chen; Heng-Tung Hsu; T. L. Lee; Y. C. Lien; C. Y. Chang

doi:10.1109/LED.2006.889238

Effect of gate sinking on the device performance of the InGaP/AlGaAs/ InGaAs enhancement-mode PHEMT

L. H. Chu^*, Edward Yi Chang, Li Chang, Y. H. Wu, S. H. Chen, Heng-Tung Hsu, T. L. Lee, Y. C. Lien, C. Y. Chang

^*此作品的通信作者

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 °C for gate sinking. After the annealing, the device showed a positive threshold voltage (V_th)shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 μA/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the V_th was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process.

原文	English
頁（從 - 到）	82-85
頁數	4
期刊	Ieee Electron Device Letters
卷	28
發行號	2
DOIs	https://doi.org/10.1109/LED.2006.889238
出版狀態	Published - 2月 2007

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title = "Effect of gate sinking on the device performance of the InGaP/AlGaAs/ InGaAs enhancement-mode PHEMT",

abstract = "An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 °C for gate sinking. After the annealing, the device showed a positive threshold voltage (Vth)shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 μA/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the Vth was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process.",

keywords = "Buried gate, Enhancement-mode (E-mode), InGaP, Platinum (Pt), Pseudomorphic high-electron mobility transistor (PHEMT), Single voltage supply",

author = "Chu, {L. H.} and Chang, {Edward Yi} and Li Chang and Wu, {Y. H.} and Chen, {S. H.} and Heng-Tung Hsu and Lee, {T. L.} and Lien, {Y. C.} and Chang, {C. Y.}",

year = "2007",

month = feb,

doi = "10.1109/LED.2006.889238",

language = "English",

volume = "28",

pages = "82--85",

journal = "Ieee Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Effect of gate sinking on the device performance of the InGaP/AlGaAs/ InGaAs enhancement-mode PHEMT

AU - Chu, L. H.

AU - Chang, Edward Yi

AU - Chang, Li

AU - Wu, Y. H.

AU - Chen, S. H.

AU - Hsu, Heng-Tung

AU - Lee, T. L.

AU - Lien, Y. C.

AU - Chang, C. Y.

PY - 2007/2

Y1 - 2007/2

N2 - An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 °C for gate sinking. After the annealing, the device showed a positive threshold voltage (Vth)shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 μA/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the Vth was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process.

AB - An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 °C for gate sinking. After the annealing, the device showed a positive threshold voltage (Vth)shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 μA/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the Vth was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process.

KW - Buried gate

KW - Enhancement-mode (E-mode)

KW - InGaP

KW - Platinum (Pt)

KW - Pseudomorphic high-electron mobility transistor (PHEMT)

KW - Single voltage supply

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U2 - 10.1109/LED.2006.889238

DO - 10.1109/LED.2006.889238

M3 - Article

AN - SCOPUS:33847383266

SN - 0741-3106

VL - 28

SP - 82

EP - 85

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 2

ER -

Effect of gate sinking on the device performance of the InGaP/AlGaAs/ InGaAs enhancement-mode PHEMT

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