Effect of gas switching on InP/InGaAs interfaces during CBE growth

S. Thomas*, Hao-Chung Kuo, A. P. Curtis, W. Wu, J. R. Tucker, G. E. Stillman

*此作品的通信作者

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The effect of a simple gas switching sequence on interface abruptness CBE growth was studied using double crystal X-ray diffraction (DCXRD), photoluminescence (PL), and scanning tunneling microscopy (STM). Optimization of the switching sequence produces monolayer abruptness for both the InP/InGaAs and the InGaAs/InP interfaces due to the X-ray rocking curve measurements, low-temperature PL measurements, and STM results.

原文English
頁(從 - 到)312-315
頁數4
期刊Conference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
出版狀態Published - 1997
事件Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
持續時間: 11 5月 199715 5月 1997

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