Effect of formation temperature on quality of gate dielectric on germanium substrate

Keyphrases

• Gate Dielectric 100%
• GeO2 100%
• Gate Stack 100%
• Germanium Substrate 100%
• Formation Temperature 100%
• Interface States 50%
• HfO2 50%
• Aluminum Oxide 50%
• Leakage Current 50%
• Deposition Temperature 50%
• Germanium 50%
• Metal-insulator-semiconductor Structures 50%
• Plasma Oxidation 50%
• Oxidation Temperature 50%
• High-Tc Films 50%

Material Science

• Germanium 100%
• Dielectric Material 100%
• Film 50%
• Oxidation Reaction 50%
• Al2O3 50%
• Semiconductor Structure 50%