TY - GEN
T1 - Effect of formation temperature on quality of gate dielectric on germanium substrate
AU - Wei, Erh Jye
AU - Tsui, Bing-Yue
AU - Wu, Pin Jiun
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/9/9
Y1 - 2016/9/9
N2 - Germanium metal-insulator-semiconductor (MIS) structure with HfO2/Al2O3/GeO2 gate stack have been demonstrated to exhibit good performance. In this work, the effect of formation temperature of the gate stack on the quality of the gate dielectric is investigated. It is found that the higher plasma oxidation temperature helps the GeO2 formation and less interface states. But the higher deposition temperature of the ALD high-k films may degrade the interface and result in higher leakage current.
AB - Germanium metal-insulator-semiconductor (MIS) structure with HfO2/Al2O3/GeO2 gate stack have been demonstrated to exhibit good performance. In this work, the effect of formation temperature of the gate stack on the quality of the gate dielectric is investigated. It is found that the higher plasma oxidation temperature helps the GeO2 formation and less interface states. But the higher deposition temperature of the ALD high-k films may degrade the interface and result in higher leakage current.
UR - http://www.scopus.com/inward/record.url?scp=84989927590&partnerID=8YFLogxK
U2 - 10.1109/IPFA.2016.7564294
DO - 10.1109/IPFA.2016.7564294
M3 - Conference contribution
AN - SCOPUS:84989927590
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
SP - 252
EP - 255
BT - Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
Y2 - 18 July 2016 through 21 July 2016
ER -