Effect of formation temperature on quality of gate dielectric on germanium substrate

Erh Jye Wei, Bing-Yue Tsui, Pin Jiun Wu

    研究成果: Conference contribution同行評審

    摘要

    Germanium metal-insulator-semiconductor (MIS) structure with HfO2/Al2O3/GeO2 gate stack have been demonstrated to exhibit good performance. In this work, the effect of formation temperature of the gate stack on the quality of the gate dielectric is investigated. It is found that the higher plasma oxidation temperature helps the GeO2 formation and less interface states. But the higher deposition temperature of the ALD high-k films may degrade the interface and result in higher leakage current.

    原文English
    主出版物標題Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面252-255
    頁數4
    ISBN(電子)9781467382588
    DOIs
    出版狀態Published - 9 9月 2016
    事件23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 - Singapore, Singapore
    持續時間: 18 7月 201621 7月 2016

    出版系列

    名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
    2016-September

    Conference

    Conference23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
    國家/地區Singapore
    城市Singapore
    期間18/07/1621/07/16

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