Effect of flash lamp annealing and laser spike annealing on random dopant fluctuation of 15-nm metal-oxide-semiconductor devices

Comparison of two different implantation processing techniques for random dopant (RD)-induced threshold voltage fluctuation (Vth) in 15-nm metal-oxide-semiconductor (MOS) devices is reported. Implantations of flash lamp annealing and laser spike annealing are simulated using a kinetic Monte Carlo (KMC) technique. The KMC generated distributions are mapped into device channel for threedimensional quantum mechanical transport simulation to estimate threshold voltage fluctuation. The main results of this study show that the laser spike annealing could achieve 30% reduction of RDFinduced Vth for low-power application of 15-nm MOS devices, compared with flash lamp annealing.