Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs

In this brief, electrical characteristics of 25-nm round-top-gate fin-typed field-effect transistors (FinFETs) on silicon wafers are numerically explored. With an ideal fin angle (i.e., θ = 90°, the FinFETs with doped and undoped (for this case, the device has a metal gate) channels that was fabricated on silicon and silicon-on-insulator wafers are simulated and compared. With a 3-D quantum-correction-transport simulation, characteristic comparison shows that bulk FinFETs with the undoped channel possess promising electrical characteristics. By considering different short-channel effects, dependence of the device performance on the nonideal fin angle and fin height is further investigated. Optimal structure configuration for the round-top-gate bulk FinFETs is thus drawn to show the strategy of fabrication in sub-25-nm MOSFET devices.