Bulk fin-shaped field effect transistor (finFET) has been viewed as a promising candidate for sub-45 nm very large-scale integrated (VLSI) circuit design and manufacturing. The structure features excellent device characteristics in comparing with the conventionally planar devices. In fabricating the bulk finFETs, the effect of a nonrectangular fin angle has to be carefully concerned that an ideal fin angle (90 degree) is not easy to be manufactured. Therefore, the short channel effect may be arisen due to the non-ideal manufacturing conditions and influence the device electrical properties. In this paper, the performance impacted by angles and heights of bulk finFETs are for the first time comprehensively investigated to draw the optimal strategy in novel VLSI circuit design.
|出版狀態||Published - 5月 2006|
|事件||2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States|
持續時間: 7 5月 2006 → 11 5月 2006
|Conference||2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings|
|期間||7/05/06 → 11/05/06|