Effect of etching depth on threshold characteristics of GaSb-based middle infrared photonic-crystal surface-emitting lasers

Zong Lin Li; Shen Chieh Lin; Kuo-Jui Lin; Hui Wen Cheng; Kien-Wen Sun; Chien-Ping Lee

doi:10.3390/mi10030188

Effect of etching depth on threshold characteristics of GaSb-based middle infrared photonic-crystal surface-emitting lasers

Zong Lin Li, Shen Chieh Lin, Kuo-Jui Lin^*, Hui Wen Cheng, Kien-Wen Sun, Chien-Ping Lee

^*此作品的通信作者

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra aremeasured to identify the bandgap as well as band-edgemodes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.

原文	English
文章編號	188
頁數	7
期刊	Micromachines
卷	10
發行號	3
DOIs	https://doi.org/10.3390/mi10030188
出版狀態	Published - 14 3月 2019

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title = "Effect of etching depth on threshold characteristics of GaSb-based middle infrared photonic-crystal surface-emitting lasers",

abstract = "We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra aremeasured to identify the bandgap as well as band-edgemodes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.",

keywords = "GaSb-based lasers, Middle infrared lasers, Photonic crystals, Surface-emitting lasers",

author = "Li, {Zong Lin} and Lin, {Shen Chieh} and Kuo-Jui Lin and Cheng, {Hui Wen} and Kien-Wen Sun and Chien-Ping Lee",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

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day = "14",

doi = "10.3390/mi10030188",

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volume = "10",

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T1 - Effect of etching depth on threshold characteristics of GaSb-based middle infrared photonic-crystal surface-emitting lasers

AU - Li, Zong Lin

AU - Lin, Shen Chieh

AU - Lin, Kuo-Jui

AU - Cheng, Hui Wen

AU - Sun, Kien-Wen

AU - Lee, Chien-Ping

PY - 2019/3/14

Y1 - 2019/3/14

N2 - We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra aremeasured to identify the bandgap as well as band-edgemodes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.

AB - We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra aremeasured to identify the bandgap as well as band-edgemodes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.

KW - GaSb-based lasers

KW - Middle infrared lasers

KW - Photonic crystals

KW - Surface-emitting lasers

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U2 - 10.3390/mi10030188

DO - 10.3390/mi10030188

M3 - Article

AN - SCOPUS:85063577767

SN - 2072-666X

VL - 10

JO - Micromachines

JF - Micromachines

IS - 3

M1 - 188

ER -

Effect of etching depth on threshold characteristics of GaSb-based middle infrared photonic-crystal surface-emitting lasers

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