Effect of etching depth on threshold characteristics of GaSb-based middle infrared photonic-crystal surface-emitting lasers

Zong Lin Li, Shen Chieh Lin, Kuo-Jui Lin*, Hui Wen Cheng, Kien-Wen Sun, Chien-Ping Lee

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra aremeasured to identify the bandgap as well as band-edgemodes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.

原文English
文章編號188
頁數7
期刊Micromachines
10
發行號3
DOIs
出版狀態Published - 14 三月 2019

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