Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Chun Yuan Huang*, Meng Chyi Wu, Hsin-Chieh Yu, Wen Jang Jiang, Jin Mei Wang, Chia Pin Sung

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The influence of electrostatic discharge (ESD) stress voltage on the device performance of 850 nm vertical-cavity surface-emitting lasers (VCSEL) was investigated. It was observed that the ESD effect induces dark-region defects, which acts as nonradiative recombination centers in the active layer and increase the leakage current and degrade the light output power. It was shown that the VCSEL exhibits multiple transverse mode without ESD stress voltage. It was demonstrated that the device exhibits a weak but single fundamental mode with smaller beam divergence by increasing the stress voltage up t0 2.6 kV.

原文English
頁(從 - 到)1970-1973
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
22
發行號4
DOIs
出版狀態Published - 1 7月 2004

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