Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlO_xon IWO Thin-Film Transistors

We investigated the electrical and material characteristics of atomic layer deposition (ALD) deposition with different sequences and concentrations of HfAlOx in Indium-Tungsten-Oxide thin film transistors (IWO-TFTs). Under the 1A10H case, we observed the best electrical properties, with threshold voltage (Vt) closest to 0 V, Ion/Ioff value of approximately 6.7 × 107, subthreshold swing (SS) of 95 mV/dec, smaller interface trap density (Nit) of 5.7 × 1012 cm-2, and superior immunity to stress-induced degradation. The X-ray photoelectron spectroscopy (XPS) results provided insights into the stability of the interface between the gate dielectric layer and the channel layer. Specifically, the 1A10H conditions exhibited a more stable interface with fewer defects. Furthermore, the choice of HfO2 as the interface layer material between HfAlOx and IWO, compared to Al2O3, demonstrated superior performance for different Hf/Al sequence combinations. These findings offer promising directions for enhancing the stability of IWO-TFTs through improvements in the interface between the channel layer and the gate dielectric layer.