Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung Tang Chu, Wen Deng Liang, Chih Chiang Kao, Hung Wen Huang, Chen Fu Chu, Hao-Chung Kuo*, S. C. Wang

*此作品的通信作者

研究成果: Conference article同行評審

摘要

Large-area (1000×1000 μm2) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.

原文English
文章編號20
頁(從 - 到)122-128
頁數7
期刊Progress in Biomedical Optics and Imaging - Proceedings of SPIE
5739
DOIs
出版狀態Published - 2005
事件Light-Emitting Diodes: Research, Manufacturing, and Applications IX - San Jose, CA, United States
持續時間: 25 1月 200527 1月 2005

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