Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane

Y. L. Cheng, Y. L. Wang*, G. J. Hwang, M. L. O'Neill, E. J. Karwacki, Po-Tsun Liu, C. F. Chen

*此作品的通信作者

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16 引文 斯高帕斯（Scopus）

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