Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
Y. L. Cheng, Y. L. Wang*, G. J. Hwang, M. L. O'Neill, E. J. Karwacki, Po-Tsun Liu, C. F. Chen
深入研究「Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane」主題。共同形成了獨特的指紋。