Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties

Chan Lim*, Yudong Kim, Tuo-Hung Hou, Jim Gutt, Steven Marcus, Christophe Pomarede, Eric Shero, Henk De Waard, Chris Werkhoven, Chen Lee, Jihane Tamim, Nirmal Chaudhary, Gennadi Bersuker, Joel Barnett, Chadwin Young, Peter Zeitzoff, George A. Brown, Mark Gardner, Robert W. Murto, Howard R. Huff

*此作品的通信作者

研究成果: Paper同行評審

摘要

A modified deposition sequence for ALCVD™ (Atomic Layer CVD™) [1] HfO2 was devised for the purpose of enhancing the layer quality. N-MOSFET performance with ALCVD™ HfO2 deposited using the modified deposition sequence, in conjunction with a subsequent plasma treatment, was demonstrated to reduce gate leakage current by over 3 orders of magnitude. Peak mobility and high field (1MV/cm) mobility were improved by 50% and 40%, respectively, when compared to conventional ALCVD™ HfO2.

原文English
頁面83-91
頁數9
出版狀態Published - 1 12月 2003
事件Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States
持續時間: 20 10月 200224 10月 2002

Conference

ConferencePhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
國家/地區United States
城市Salt Lake City, UT
期間20/10/0224/10/02

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