This letter reports the fabrication of polycrystalline silicon (poly-Si) tunnelingfield effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as 1.2 mu m are attained. This makes it possible to fabricate tunnelingFETwith high-quali ty poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/ off ratio of 6.02 x 10(5). Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films.