Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Hao-Tung Chung*, Chun-Ting Chen, Yi-Shao Li, Yu-Wei Liu, Chan-Yu Liao, Wen-Hsien Huang, Jia-Min Shieh, Jun-Dao Luo, Wei-Shuo Li, Kai-Chi Chuang, Kuan-Neng Chen, Huang-Chung Cheng

*此作品的通信作者

    研究成果: Article同行評審

    摘要

    This letter reports the fabrication of polycrystalline silicon (poly-Si) tunnelingfield effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as 1.2 mu m are attained. This makes it possible to fabricate tunnelingFETwith high-quali ty poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/ off ratio of 6.02 x 10(5). Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films.

    原文English
    文章編號9314229
    頁(從 - 到)164-167
    頁數4
    期刊Ieee Electron Device Letters
    42
    發行號2
    DOIs
    出版狀態Published - 二月 2021

    指紋

    深入研究「Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization」主題。共同形成了獨特的指紋。

    引用此