Effect of coplanar probe pad design on noise figures of 0.35 μm MOSFETs

C. Y. Su*, L. P. Chen, S. J. Chang, G. W. Huang, Y. P. Ho, B. M. Tseng, D. C. Lin, H. Y. Lee, J. F. Kuan, Y. M. Deng, C. L. Chen, L. Y. Leu, Kuei-Ann Wen, C. Y. Chang

*此作品的通信作者

    研究成果: Article同行評審

    4 引文 斯高帕斯(Scopus)

    摘要

    The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterizing the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.

    原文English
    頁(從 - 到)1280-1281
    頁數2
    期刊Electronics Letters
    36
    發行號15
    DOIs
    出版狀態Published - 20 7月 2000

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