Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures

Horng-Chih Lin*, Hsiao Yi Lin, Chun Yen Chang, Tz Gwei Jung, P. J. Wang, Ray Chern Deng, Jandel Lin

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The deposition and properties of in situ boron-doped polycrystalline silicon (poly-Si) films grown at 550°C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, the boron incorporation would significantly reduce the deposition rate, impede the grain growth, and degrade the crystallinity of the poly-Si films. We also found that the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of deposition shortened the incubation time of deposition. The property of trapping states at the grain boundary is also examined, and a density of about 4.7×1012 cm-2 is obtained for poly-Si films with a doping level less than 2.2×1019 cm-3.

原文English
頁(從 - 到)1572-1577
頁數6
期刊Journal of Applied Physics
76
發行號3
DOIs
出版狀態Published - 1994

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