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Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots
Jenn-Fang Chen
, C. H. Chiang, Y. H. Wu,
Li Chang
, J. Y. Chi
電子物理學系
材料科學與工程學系
研究成果
:
Article
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同行評審
9
引文 斯高帕斯(Scopus)
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Keyphrases
Antimony
100%
Atomic Force Microscopy
11%
Blue Shift
22%
Buried Layer
11%
Ellipsoid
11%
Emission Efficiency
11%
Equivalent Pressure
55%
InAs Quantum Dots
100%
Luminescence
100%
Order of Magnitude
11%
Periodic Structures
11%
Photoluminescence
11%
Quantum Dots
100%
Quantum Well
11%
Room-temperature Photoluminescence
11%
Sb Incorporation
11%
Secondary Ion Mass Spectrometry
11%
Surface Morphology
11%
Surface Recombination Velocity
11%
Surfactant Effect
22%
Terraces
11%
Material Science
Antimony
100%
Atomic Force Microscopy
9%
Density
100%
Luminescence
100%
Periodic Structure
9%
Photoluminescence
18%
Quantum Dot
100%
Quantum Well
9%
Secondary Ion Mass Spectrometry
9%
Surface (Surface Science)
18%
Surface Active Agent
18%
Surface Morphology
9%
Earth and Planetary Sciences
Atomic Force Microscopy
33%
Emissions
100%
Mass Spectroscopy
33%
Photoluminescence
66%
Room Temperature
33%
Surfactant
66%
Chemistry
Ambient Reaction Temperature
9%
Antimony
100%
Atomic Force Microscopy
9%
Photoluminescence
18%
Quantum Dot
100%
Secondary Ion Mass Spectroscopy
9%
Surface Recombination
9%
Surfactant
18%
Engineering
Atomic Force Microscopy
9%
Blueshift
18%
Dot Layer
18%
Quantum Dot
100%
Quantum Well
9%
Room Temperature
9%
Sb Incorporation
9%
Surface Morphology
9%
Surface Recombination Velocity
9%
Surfactant
18%
Chemical Engineering
Surfactant
100%